- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
897
In-stock
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ON Semiconductor | MOSFET N-CH 600V 11A I2PAK | SuperFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 125W (Tc) | N-Channel | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | 10V | ±30V | |||
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VIEW |
2,289
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 178W (Tc) | N-Channel | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
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VIEW |
2,666
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 11A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 190W (Tc) | N-Channel | 500V | 11A (Tc) | 550 mOhm @ 6.6A, 10V | 4V @ 250µA | 51nC @ 10V | 1426pF @ 25V | 10V | ±30V | |||
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VIEW |
2,166
In-stock
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STMicroelectronics | MOSFET N-CH 650V 11A I2PAK | MDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | N-Channel | 650V | 11A (Tc) | 450 mOhm @ 5.5A, 10V | 5V @ 250µA | 30nC @ 10V | 1000pF @ 25V | 10V | ±30V | |||
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VIEW |
3,375
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 11A TO262 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 198W (Tc) | N-Channel | 650V | 11A (Tc) | 399 mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2nC @ 10V | 646pF @ 100V | 10V | ±30V | |||
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VIEW |
1,354
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 272W (Tc) | N-Channel | 600V | 11A (Tc) | 700 mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | 1990pF @ 25V | 10V | ±30V | |||
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VIEW |
3,557
In-stock
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STMicroelectronics | MOSFET N-CH 800V 11A I2PAK-3 | MDmesh™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 150W (Tc) | N-Channel | 800V | 11A (Tc) | 400 mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | 1630pF @ 25V | 10V | ±30V | |||
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VIEW |
1,247
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 11A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 190W (Tc) | N-Channel | 500V | 11A (Tc) | 550 mOhm @ 6.6A, 10V | 4V @ 250µA | 51nC @ 10V | 1426pF @ 25V | 10V | ±30V |