Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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897
In-stock
ON Semiconductor MOSFET N-CH 600V 11A I2PAK SuperFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 125W (Tc) N-Channel 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 5V @ 250µA 52nC @ 10V 1490pF @ 25V 10V ±30V
AOW11S60
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2,289
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 178W (Tc) N-Channel 600V 11A (Tc) 399 mOhm @ 3.8A, 10V 4.1V @ 250µA 11nC @ 10V 545pF @ 100V 10V ±30V
IRFSL11N50A
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2,666
In-stock
Vishay Siliconix MOSFET N-CH 500V 11A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 190W (Tc) N-Channel 500V 11A (Tc) 550 mOhm @ 6.6A, 10V 4V @ 250µA 51nC @ 10V 1426pF @ 25V 10V ±30V
STB11NM60-1
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2,166
In-stock
STMicroelectronics MOSFET N-CH 650V 11A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 160W (Tc) N-Channel 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 10V ±30V
AOW11S65
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3,375
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 650V 11A TO262 aMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 198W (Tc) N-Channel 650V 11A (Tc) 399 mOhm @ 5.5A, 10V 4V @ 250µA 13.2nC @ 10V 646pF @ 100V 10V ±30V
AOW11N60
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RFQ
1,354
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 272W (Tc) N-Channel 600V 11A (Tc) 700 mOhm @ 5.5A, 10V 4.5V @ 250µA 37nC @ 10V 1990pF @ 25V 10V ±30V
STI11NM80
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RFQ
3,557
In-stock
STMicroelectronics MOSFET N-CH 800V 11A I2PAK-3 MDmesh™ Not For New Designs Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 150W (Tc) N-Channel 800V 11A (Tc) 400 mOhm @ 5.5A, 10V 5V @ 250µA 43.6nC @ 10V 1630pF @ 25V 10V ±30V
IRFSL11N50APBF
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RFQ
1,247
In-stock
Vishay Siliconix MOSFET N-CH 500V 11A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 190W (Tc) N-Channel 500V 11A (Tc) 550 mOhm @ 6.6A, 10V 4V @ 250µA 51nC @ 10V 1426pF @ 25V 10V ±30V