- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,845
In-stock
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IXYS | MOSFET N-CH 900V ISOPLUS247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 200W (Tc) | N-Channel | - | 900V | 10.5A (Tc) | 660 mOhm @ 9A, 10V | 6V @ 1mA | 97nC @ 10V | 5230pF @ 25V | 10V | ±30V | |||
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VIEW |
961
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 200W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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VIEW |
3,515
In-stock
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STMicroelectronics | MOSFET N-CH 900V 9.2A TO-247 | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 200W (Tc) | N-Channel | - | 900V | 9.2A (Tc) | 980 mOhm @ 4.6A, 10V | 4.5V @ 100µA | 115nC @ 10V | 3000pF @ 25V | 10V | ±30V |