- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,846
In-stock
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ON Semiconductor | MOSFET N-CH 900V 10A TO-3PB | - | Obsolete | Tray | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PB | 2.5W (Ta), 190W (Tc) | N-Channel | 900V | 10A (Ta) | 1.3 Ohm @ 5A, 10V | - | 75nC @ 10V | 1500pF @ 30V | 10V | ±30V | ||||
VIEW |
3,102
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 1A DP | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 40W (Tc) | N-Channel | 900V | 1A (Ta) | 9 Ohm @ 500mA, 10V | 4V @ 1mA | 15nC @ 10V | 350pF @ 25V | 10V | ±30V | ||||
VIEW |
3,465
In-stock
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STMicroelectronics | MOSFET N-CH 900V 26A ISOTOP | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Chassis Mount | ISOTOP | ISOTOP® | 450W (Tc) | N-Channel | 900V | 26A (Tc) | 300 mOhm @ 13A, 10V | 3.75V @ 1mA | 660nC @ 10V | 1770pF @ 25V | 10V | ±30V | ||||
VIEW |
1,673
In-stock
|
STMicroelectronics | MOSFET N-CH 900V 5.8A TO-220 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 135W (Tc) | N-Channel | 900V | 5.8A (Tc) | 2 Ohm @ 3A, 10V | 5V @ 250µA | 55nC @ 10V | 1400pF @ 25V | 10V | ±30V | ||||
VIEW |
3,943
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 8A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 85W (Tc) | N-Channel | 900V | 8A (Ta) | 1.4 Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | 2040pF @ 25V | 10V | ±30V | ||||
VIEW |
3,478
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 125W (Tc) | N-Channel | 900V | 3A (Ta) | 4.3 Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | 10V | ±30V |