- Series :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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20 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,422
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 6A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 60W (Tc) | N-Channel | 900V | 6A (Ta) | 3 Ohm @ 3A, 10V | - | - | 980pF @ 10V | 10V | ±30V | ||||
VIEW |
1,144
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 8A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 60W (Tc) | N-Channel | 900V | 8A (Ta) | 1.6 Ohm @ 4A, 10V | - | - | 1730pF @ 10V | 10V | ±30V | ||||
VIEW |
1,120
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 6A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 100W (Tc) | N-Channel | 900V | 8A (Ta) | 1.6 Ohm @ 4A, 10V | - | - | 1730pF @ 10V | 10V | ±30V | ||||
VIEW |
2,394
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 6A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 100W (Tc) | N-Channel | 900V | 6A (Ta) | 3 Ohm @ 3A, 10V | - | - | 980pF @ 10V | 10V | ±30V | ||||
VIEW |
3,197
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 5A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 100W (Tc) | N-Channel | 900V | 5A (Ta) | 4 Ohm @ 3A, 10V | - | - | 740pF @ 10V | 10V | ±30V | ||||
VIEW |
3,616
In-stock
|
Renesas Electronics America | MOSFET N-CH 900V 3A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 80W (Tc) | N-Channel | 900V | 3A (Ta) | 7 Ohm @ 1.5A, 10V | - | - | 425pF @ 10V | 10V | ±30V | ||||
VIEW |
3,977
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 2.5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 900V | 2.5A (Ta) | 6.4 Ohm @ 1.5A, 10V | 4V @ 1mA | 12nC @ 10V | 470pF @ 25V | 10V | ±30V | ||||
VIEW |
967
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 900V | 3A (Ta) | 4.3 Ohm @ 1.5A, 10V | 4V @ 1mA | 17nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
3,041
In-stock
|
Sanken | MOSFET N-CH 900V TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | N-Channel | 900V | 3A (Ta) | 5 Ohm @ 1.5A, 10V | 4V @ 1mA | - | 600pF @ 10V | 10V | ±30V | ||||
VIEW |
1,767
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 900V | 5A (Ta) | 2.5 Ohm @ 3A, 10V | 4V @ 1mA | 28nC @ 10V | 1150pF @ 25V | 10V | ±30V | ||||
VIEW |
2,872
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | ||||
VIEW |
1,094
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | ||||
VIEW |
3,942
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | ||||
VIEW |
1,670
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | ||||
VIEW |
2,641
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | ||||
VIEW |
2,150
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 900V 2.5A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 94W (Tc) | N-Channel | 900V | 2.5A (Tc) | 5.1 Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | 10V | ±30V | ||||
VIEW |
961
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 200W (Tc) | N-Channel | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
3,677
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | ||||
VIEW |
1,980
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
3,303
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 250W (Tc) | N-Channel | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V |