Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3566(STA4,Q,M)
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3,977
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 2.5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 2.5A (Ta) 6.4 Ohm @ 1.5A, 10V 4V @ 1mA 12nC @ 10V 470pF @ 25V 10V ±30V
2SK3564(STA4,Q,M)
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RFQ
967
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V 3A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 3A (Ta) 4.3 Ohm @ 1.5A, 10V 4V @ 1mA 17nC @ 10V 700pF @ 25V 10V ±30V
2SK3565(Q,M)
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RFQ
1,767
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V 5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 900V 5A (Ta) 2.5 Ohm @ 3A, 10V 4V @ 1mA 28nC @ 10V 1150pF @ 25V 10V ±30V
TK9A90E,S4X
RFQ
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RFQ
3,677
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO220SIS π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel - 900V 9A (Ta) 1.3 Ohm @ 4.5A, 10V 4V @ 900µA 46nC @ 10V 2000pF @ 25V 10V ±30V
TK7A90E,S4X
RFQ
VIEW
RFQ
1,980
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO220SIS π-MOSVIII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 900V 7A (Ta) 2 Ohm @ 3.5A, 10V 4V @ 700µA 32nC @ 10V 1350pF @ 25V 10V ±30V