- Manufacture :
- Packaging :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||
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VIEW |
1,230
In-stock
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Global Power Technologies Group | MOSFET N-CH 900V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 123W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
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VIEW |
1,722
In-stock
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ON Semiconductor | MOSFET N-CH 200V 18A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 123W (Tc) | N-Channel | 200V | 18A (Tc) | 140 mOhm @ 9A, 10V | 5V @ 250µA | 26nC @ 10V | 1080pF @ 25V | 10V | ±30V | |||
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VIEW |
1,720
In-stock
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ON Semiconductor | MOSFET P-CH 200V 11A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 123W (Tc) | P-Channel | 200V | 11A (Tc) | 500 mOhm @ 5.5A, 10V | 4V @ 250µA | 59nC @ 10V | 1585pF @ 25V | 10V | ±30V |