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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AOT11C60PL	RFQ VIEW	PDF RFQ	637 In-stock	Alpha & Omega Semiconductor Inc.	MOSFET N-CH		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	298W (Tc)	N-Channel	-	600V	11A (Tc)	420 mOhm @ 5.5A, 10V	5V @ 250µA	50nC @ 10V	2333pF @ 100V	10V	±30V
	APT10090BLLG	RFQ VIEW	PDF RFQ	2,349 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 12A TO-247		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	298W (Tc)	N-Channel	-	1000V	12A (Tc)	950 mOhm @ 6A, 10V	5V @ 1mA	71nC @ 10V	1969pF @ 25V	10V	±30V
	TSM60NB099CZ C0G	RFQ VIEW	PDF RFQ	3,913 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 38A TO220		-	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	298W (Tc)	N-Channel	-	600V	38A (Tc)	99 mOhm @ 11.3A, 10V	4V @ 250µA	62nC @ 10V	2587pF @ 100V	10V	±30V
	FQA62N25C	RFQ VIEW	PDF RFQ	3,047 In-stock	ON Semiconductor	MOSFET N-CH 250V 62A TO-3P		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN	298W (Tc)	N-Channel	-	250V	62A (Tc)	35 mOhm @ 31A, 10V	4V @ 250µA	130nC @ 10V	6280pF @ 25V	10V	±30V

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