Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQB19N20TM
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1,078
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ON Semiconductor MOSFET N-CH 200V 19.4A D2PAK QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 140W (Tc) N-Channel - 200V 19.4A (Tc) 150 mOhm @ 9.7A, 10V 5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
FQB19N20TM
RFQ
VIEW
RFQ
979
In-stock
ON Semiconductor MOSFET N-CH 200V 19.4A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 140W (Tc) N-Channel - 200V 19.4A (Tc) 150 mOhm @ 9.7A, 10V 5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
FQB19N20TM
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RFQ
1,580
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ON Semiconductor MOSFET N-CH 200V 19.4A D2PAK QFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 140W (Tc) N-Channel - 200V 19.4A (Tc) 150 mOhm @ 9.7A, 10V 5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
FQI4N90TU
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RFQ
2,834
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ON Semiconductor MOSFET N-CH 900V 4.2A I2PAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 140W (Tc) N-Channel - 900V 4.2A (Tc) 3.3 Ohm @ 2.1A, 10V 5V @ 250µA 30nC @ 10V 1100pF @ 25V 10V ±30V