- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,211
In-stock
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STMicroelectronics | MOSFET N-CH 620V 7A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 30W (Tc) | N-Channel | - | 620V | 7A (Tc) | 1.2 Ohm @ 2.9A, 10V | 4.5V @ 50µA | 35nC @ 10V | 890pF @ 50V | 10V | ±30V | |||
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VIEW |
3,992
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO262F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | - | 25W (Tc) | N-Channel | - | 600V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2nC @ 10V | 372pF @ 100V | 10V | ±30V | |||
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VIEW |
3,828
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 7A TO262F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | - | 25W (Tc) | N-Channel | - | 650V | 7A (Tc) | 650 mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | 434pF @ 100V | 10V | ±30V | |||
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VIEW |
914
In-stock
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STMicroelectronics | MOSFET N-CH 800V 7A I2PAKFP | MDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | - | 25W (Tc) | N-Channel | - | 800V | 7A (Tc) | 900 mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | 340pF @ 100V | 10V | ±30V |