Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK4002DPP-M0#T2
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1,767
In-stock
Renesas Electronics America MOSFET N-CH 400V 3A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FL 20W (Tc) N-Channel - 400V 3A (Ta) 2.9 Ohm @ 1.5A, 10V - 6nC @ 100V 165pF @ 25V 10V ±30V
2SK3564(STA4,Q,M)
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RFQ
967
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V 3A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 3A (Ta) 4.3 Ohm @ 1.5A, 10V 4V @ 1mA 17nC @ 10V 700pF @ 25V 10V ±30V
2SK2803
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2,625
In-stock
Sanken MOSFET N-CH 450V TO-220F - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30W (Tc) N-Channel - 450V 3A (Ta) 2.8 Ohm @ 1.5A, 10V 4V @ 1mA - 340pF @ 10V 10V ±30V
2SK2943
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RFQ
3,041
In-stock
Sanken MOSFET N-CH 900V TO-220F - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30W (Tc) N-Channel - 900V 3A (Ta) 5 Ohm @ 1.5A, 10V 4V @ 1mA - 600pF @ 10V 10V ±30V
TK3A65D(STA4,Q,M)
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RFQ
1,051
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 3A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 650V 3A (Ta) 2.25 Ohm @ 1.5A, 10V 4.4V @ 1mA 11nC @ 10V 540pF @ 25V 10V ±30V