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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,425
In-stock
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Infineon Technologies | MOSFET N-CH 150V 51A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 230W (Tc) | N-Channel | 150V | 51A (Tc) | 32 mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | 2770pF @ 25V | 10V | ±30V | |||
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VIEW |
3,661
In-stock
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Infineon Technologies | MOSFET N-CH 150V 51A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 230W (Tc) | N-Channel | 150V | 51A (Tc) | 32 mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | 2770pF @ 25V | 10V | ±30V | |||
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VIEW |
3,359
In-stock
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Rohm Semiconductor | MOSFET N-CH 250V 51A LPTS | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 1.56W (Ta), 40W (Tc) | N-Channel | 250V | 51A (Tc) | 65 mOhm @ 25.5A, 10V | 5V @ 1mA | 120nC @ 10V | 7000pF @ 25V | 10V | ±30V | |||
