Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQT3P20TF
RFQ
VIEW
RFQ
1,516
In-stock
ON Semiconductor MOSFET P-CH 200V 0.67A SOT-223 QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.5W (Tc) P-Channel - 200V 670mA (Tc) 2.7 Ohm @ 335mA, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V
FQT3P20TF
RFQ
VIEW
RFQ
3,433
In-stock
ON Semiconductor MOSFET P-CH 200V 0.67A SOT-223 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.5W (Tc) P-Channel - 200V 670mA (Tc) 2.7 Ohm @ 335mA, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V
FQT3P20TF
RFQ
VIEW
RFQ
3,956
In-stock
ON Semiconductor MOSFET P-CH 200V 0.67A SOT-223 QFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.5W (Tc) P-Channel - 200V 670mA (Tc) 2.7 Ohm @ 335mA, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V
FQP3P20
RFQ
VIEW
RFQ
2,634
In-stock
ON Semiconductor MOSFET P-CH 200V 2.8A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 52W (Tc) P-Channel - 200V 2.8A (Tc) 2.7 Ohm @ 1.4A, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V
FQU2N50BTU-WS
RFQ
VIEW
RFQ
803
In-stock
ON Semiconductor MOSFET N-CH 500V 1.6A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 30W (Tc) N-Channel - 500V 1.6A (Tc) 5.3 Ohm @ 800mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V
FQNL2N50BTA
RFQ
VIEW
RFQ
1,612
In-stock
ON Semiconductor MOSFET N-CH 500V 0.35A TO-92-3 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92-3 1.5W (Tc) N-Channel - 500V 350mA (Tc) 5.3 Ohm @ 175mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V
FQNL2N50BTA
RFQ
VIEW
RFQ
3,075
In-stock
ON Semiconductor MOSFET N-CH 500V 0.35A TO-92-3 QFET® Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92-3 1.5W (Tc) N-Channel - 500V 350mA (Tc) 5.3 Ohm @ 175mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V