- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,612
In-stock
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ON Semiconductor | MOSFET N-CH 500V 0.35A TO-92-3 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92-3 | 1.5W (Tc) | N-Channel | - | 500V | 350mA (Tc) | 5.3 Ohm @ 175mA, 10V | 3.7V @ 250µA | 8nC @ 10V | 230pF @ 25V | 10V | ±30V | ||||
VIEW |
3,819
In-stock
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ON Semiconductor | MOSFET N-CH 500V 380MA TO-92 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 890mW (Ta), 2.08W (Tc) | N-Channel | - | 500V | 380mA (Tc) | 6 Ohm @ 190mA, 10V | 4V @ 250µA | 6.4nC @ 10V | 195pF @ 25V | 10V | ±30V | ||||
VIEW |
2,022
In-stock
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ON Semiconductor | MOSFET N-CH 600V 300MA TO-92 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta), 3W (Tc) | N-Channel | - | 600V | 300mA (Tc) | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V |