Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQA5N90
RFQ
VIEW
RFQ
2,950
In-stock
ON Semiconductor MOSFET N-CH 900V 5.8A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 185W (Tc) N-Channel - 900V 5.8A (Tc) 2.3 Ohm @ 2.9A, 10V 5V @ 250µA 40nC @ 10V 1550pF @ 25V 10V ±30V
FQA6N70
RFQ
VIEW
RFQ
2,791
In-stock
ON Semiconductor MOSFET N-CH 700V 6.4A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 152W (Tc) N-Channel - 700V 6.4A (Tc) 1.5 Ohm @ 3.2A, 10V 5V @ 250µA 40nC @ 10V 1400pF @ 25V 10V ±30V
FQA14N30
RFQ
VIEW
RFQ
1,096
In-stock
ON Semiconductor MOSFET N-CH 300V 15A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 160W (Tc) N-Channel - 300V 15A (Tc) 290 mOhm @ 7.5A, 10V 5V @ 250µA 40nC @ 10V 1360pF @ 25V 10V ±30V