- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
613
In-stock
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ON Semiconductor | MOSFET N-CH 200V 4.6A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 40W (Tc) | N-Channel | 200V | 4.6A (Tc) | 800 mOhm @ 2.3A, 10V | 4V @ 250µA | 16nC @ 10V | 390pF @ 25V | 10V | ±30V | |||
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VIEW |
2,879
In-stock
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ON Semiconductor | MOSFET N-CH 200V 4.6A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 40W (Tc) | N-Channel | 200V | 4.6A (Tc) | 800 mOhm @ 2.3A, 10V | 4V @ 250µA | 16nC @ 10V | 390pF @ 25V | 10V | ±30V | |||
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VIEW |
1,659
In-stock
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ON Semiconductor | MOSFET N-CH 600V 4.6A I-PAK | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 54W (Tc) | N-Channel | 600V | 4.6A (Tc) | 950 mOhm @ 2.3A, 10V | 5V @ 250µA | 16nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
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VIEW |
2,627
In-stock
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STMicroelectronics | MOSFET N-CH 1000V 1.85A IPAK | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | 1000V | 1.85A (Tc) | 8.5 Ohm @ 900mA, 10V | 4.5V @ 50µA | 16nC @ 10V | 499pF @ 25V | 10V | ±30V | |||
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VIEW |
1,139
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | 650V | 7.8A (Ta) | 670 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
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VIEW |
1,013
In-stock
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ON Semiconductor | MOSFET N-CH 200V 4.6A IPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 40W (Tc) | N-Channel | 200V | 4.6A (Tc) | 800 mOhm @ 2.3A, 10V | 4V @ 250µA | 16nC @ 10V | 390pF @ 25V | 10V | ±30V | |||
