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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	NDD03N50Z-1G	RFQ VIEW	PDF RFQ	1,835 In-stock	ON Semiconductor	MOSFET N-CH 500V 2.6A IPAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	58W (Tc)	N-Channel	-	500V	2.6A (Tc)	3.3 Ohm @ 1.15A, 10V	4.5V @ 50µA	10nC @ 10V	274pF @ 25V	10V	±30V
	FQU4N50TU	RFQ VIEW	PDF RFQ	2,138 In-stock	ON Semiconductor	MOSFET N-CH 500V 2.6A IPAK		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	2.5W (Ta), 45W (Tc)	N-Channel	-	500V	2.6A (Tc)	2.7 Ohm @ 1.3A, 10V	5V @ 250µA	13nC @ 10V	460pF @ 25V	10V	±30V
	NDD03N60Z-1G	RFQ VIEW	PDF RFQ	1,894 In-stock	ON Semiconductor	MOSFET N-CH 600V IPAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	61W (Tc)	N-Channel	-	600V	2.6A (Tc)	3.6 Ohm @ 1.2A, 10V	4.5V @ 50µA	12nC @ 10V	312pF @ 25V	10V	±30V
	FQU4N50TU-WS	RFQ VIEW	PDF RFQ	2,615 In-stock	ON Semiconductor	MOSFET N-CH 500V 2.6A IPAK		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	2.5W (Ta), 45W (Tc)	N-Channel	-	500V	2.6A (Tc)	2.7 Ohm @ 1.3A, 10V	5V @ 250µA	13nC @ 10V	460pF @ 25V	10V	±30V

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