- Manufacture :
- Series :
- Part Status :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,000
In-stock
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ON Semiconductor | MOSFET N-CH 600V 1A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 30W (Tc) | N-Channel | - | 600V | 1A (Tc) | 11.5 Ohm @ 500mA, 10V | 5V @ 250µA | 6nC @ 10V | 150pF @ 25V | 10V | ±30V | |||
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VIEW |
1,878
In-stock
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STMicroelectronics | MOSFET N-CH 600V 1A IPAK | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 30W (Tc) | N-Channel | - | 600V | 1A (Tc) | 8.5 Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | 156pF @ 25V | 10V | ±30V | |||
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VIEW |
3,222
In-stock
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ON Semiconductor | MOSFET N-CH 600V 1A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 28W (Tc) | N-Channel | - | 600V | 1A (Tc) | 11.5 Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V |