- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.05 Ohm @ 2.9A, 10V (1)
- 1.2 Ohm @ 2.8A, 10V (1)
- 1.22 Ohm @ 2.6A, 10V (1)
- 1.3 Ohm @ 2.7A, 10V (2)
- 2 Ohm @ 1.9A, 10V (1)
- 2.5 Ohm @ 1.4A, 10V (1)
- 2.6 Ohm @ 1.25A, 10V (1)
- 3 Ohm @ 1.25A, 10V (1)
- 3.6 Ohm @ 1.1A, 10V (2)
- 340 mOhm @ 5.8A, 10V (1)
- 4.5 Ohm @ 1A, 10V (1)
- 430 mOhm @ 4.9A, 10V (1)
- 500 mOhm @ 4A, 10V (1)
- 600 mOhm @ 3.5A, 10V (1)
- 670 mOhm @ 3.9A, 10V (1)
- 700 mOhm @ 3.5A, 10V (1)
- 820 mOhm @ 3.1A, 10V (1)
- 900 mOhm @ 2.7A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
20 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,156
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,517
In-stock
|
STMicroelectronics | MOSFET N-CH 650V IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 650V | 6A (Tc) | 1.3 Ohm @ 2.7A, 10V | 4.5V @ 50µA | 34nC @ 10V | 895pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
1,986
In-stock
|
STMicroelectronics | MOSFET N-CH 620V 3.8A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 620V | 3.8A (Tc) | 2 Ohm @ 1.9A, 10V | 4.5V @ 50µA | 22nC @ 10V | 550pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
2,147
In-stock
|
STMicroelectronics | MOSFET N-CH 620V 2.2A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 620V | 2.2A (Tc) | 3.6 Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15nC @ 10V | 340pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,343
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,312
In-stock
|
STMicroelectronics | MOSFET N-CH 620V 5.5A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 90W (Tc) | N-Channel | - | 620V | 5.5A (Tc) | 1.2 Ohm @ 2.8A, 10V | 4.5V @ 50µA | 30nC @ 10V | 875pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
3,405
In-stock
|
STMicroelectronics | MOSFET N-CH 620V 2.7A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 620V | 2.7A (Tc) | 2.5 Ohm @ 1.4A, 10V | 4.5V @ 50µA | 13nC @ 10V | 385pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,834
In-stock
|
STMicroelectronics | MOSFET N CH 600V 2A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.5 Ohm @ 1A, 10V | 4.5V @ 50µA | 12nC @ 10V | 235pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
2,335
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 7A IPAK | FDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 600V | 7A (Tc) | 700 mOhm @ 3.5A, 10V | 5V @ 250µA | 22nC @ 10V | 560pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
3,753
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,763
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,139
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 670 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,332
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.22 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,016
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 5.4A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 110W (Tc) | N-Channel | - | 650V | 5.4A (Tc) | 1.3 Ohm @ 2.7A, 10V | 4.5V @ 50µA | 33nC @ 10V | 880pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
3,058
In-stock
|
STMicroelectronics | MOSFET N-CH 620V 3A IPAK | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 620V | 3A (Tc) | 3.6 Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15.5nC @ 10V | 350pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
2,671
In-stock
|
STMicroelectronics | MOSFET N-CH 620V 2.5A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 620V | 2.5A (Tc) | 3 Ohm @ 1.25A, 10V | 4.5V @ 50µA | 17nC @ 10V | 386pF @ 50V | 10V | ±30V | |||
|
VIEW |
1,096
In-stock
|
STMicroelectronics | MOSFET N-CH 525V 2.5A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 525V | 2.5A (Tc) | 2.6 Ohm @ 1.25A, 10V | 4.5V @ 50µA | 11nC @ 10V | 334pF @ 100V | 10V | ±30V | |||
