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- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,268
In-stock
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STMicroelectronics | MOSFET P-CH 500V 2.8A DPAK | SuperMESH™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 70W (Tc) | P-Channel | - | 500V | 2.8A (Tc) | 4 Ohm @ 1.4A, 10V | 4.5V @ 100µA | 20nC @ 10V | 620pF @ 25V | 10V | ±30V | |||
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VIEW |
904
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
1,951
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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VIEW |
1,485
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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VIEW |
2,363
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
