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- Vgs(th) (Max) @ Id :
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21 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,121
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 40A 1212-8S | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
2,287
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 40A 1212-8S | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
2,611
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 40A 1212-8S | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
2,767
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
1,920
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,077
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
1,587
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 40A PPAK 1212 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
871
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 40A PPAK 1212 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
1,857
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 40A PPAK 1212 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
2,358
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 60A 8SOP ADV | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | P-Channel | - | 20V | 60A (Tc) | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
676
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 60A 8SOP ADV | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | P-Channel | - | 20V | 60A (Tc) | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,334
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 60A 8SOP ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | P-Channel | - | 20V | 60A (Tc) | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,369
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
1,099
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,308
In-stock
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,536
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,961
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
2,757
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,868
In-stock
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Texas Instruments | MOSFET P-CH 20V 76A 8SON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 69W (Tc) | P-Channel | - | 20V | 76A (Tc) | 8.9 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7nC @ 4.5V | 1790pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
817
In-stock
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Texas Instruments | MOSFET P-CH 20V 76A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 69W (Tc) | P-Channel | - | 20V | 76A (Tc) | 8.9 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7nC @ 4.5V | 1790pF @ 10V | 1.8V, 4.5V | ±12V | |||
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|
VIEW |
3,606
In-stock
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Texas Instruments | MOSFET P-CH 20V 76A 8SON | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 69W (Tc) | P-Channel | - | 20V | 76A (Tc) | 8.9 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7nC @ 4.5V | 1790pF @ 10V | 1.8V, 4.5V | ±12V | |||
