Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLR024ZTRPBF
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2,682
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Infineon Technologies MOSFET N-CH 55V 16A DPAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 35W (Tc) N-Channel - 55V 16A (Tc) 58 mOhm @ 9.6A, 10V 3V @ 250µA 9.9nC @ 5V 380pF @ 25V 4.5V, 10V ±16V
BUK663R5-55C,118
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3,682
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Nexperia USA Inc. MOSFET N-CH 55V 120A D2PAK Automotive, AEC-Q101, TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 263W (Tc) N-Channel - 55V 120A (Tc) 3.4 mOhm @ 25A, 10V 2.8V @ 1mA 191nC @ 10V 11516pF @ 25V 4.5V, 10V ±16V
IRL3705ZSTRL
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3,317
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Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V
AUIRLR024ZTRL
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2,579
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Infineon Technologies MOSFET N CH 55V 16A DPAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 35W (Tc) N-Channel - 55V 16A (Tc) 58 mOhm @ 9.6A, 10V 3V @ 250µA 9.9nC @ 5V 380pF @ 25V 4.5V, 10V ±16V