- Manufacture :
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- Technology :
- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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SOT223-1.jpg)
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VIEW |
2,270
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 2.5A SOT223 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta), 8.3W (Tc) | N-Channel | - | 55V | 2.5A (Ta) | 150 mOhm @ 5A, 5V | 2V @ 1mA | 4.5nC @ 5V | 330pF @ 25V | 5V | ±13V | |||
|
VIEW |
2,564
In-stock
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EPC | TRANS GAN 100V 18A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 18A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | 420pF @ 50V | 5V | +6V, -4V | |||
