- Manufacture :
- Part Status :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,443
In-stock
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ON Semiconductor | MOSFET N-CH 100V 10A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.75W (Ta), 40W (Tc) | N-Channel | - | 100V | 10A (Tc) | 220 mOhm @ 5A, 5V | 2V @ 250µA | 15nC @ 5V | 1040pF @ 25V | 5V | ±15V | |||
|
VIEW |
3,773
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 3A SOT-223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.3W (Ta) | N-Channel | - | 60V | 3A (Ta) | 120 mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | 5V | ±15V | |||
|
VIEW |
1,506
In-stock
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EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
2,225
In-stock
|
ON Semiconductor | MOSFET N-CH 200V 1.13A SOT-223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2W (Tc) | N-Channel | - | 200V | 1.13A (Ta) | 800 mOhm @ 570mA, 5V | - | 15nC @ 5V | 430pF @ 25V | 5V | ±20V | |||
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|
VIEW |
3,984
In-stock
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ON Semiconductor | MOSFET N-CH 60V 3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.3W (Ta) | N-Channel | - | 60V | 3A (Ta) | 120 mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | 5V | ±15V | |||
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|
VIEW |
1,115
In-stock
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ON Semiconductor | MOSFET N-CH 60V 3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.3W (Ta) | N-Channel | - | 60V | 3A (Ta) | 120 mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | 5V | ±15V | |||
|
VIEW |
3,286
In-stock
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | |||
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|
VIEW |
1,818
In-stock
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EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
