- Manufacture :
- Part Status :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,943
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 2A SOT223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 (TO-261) | 1.3W (Ta) | N-Channel | 60V | 2A (Ta) | 175 mOhm @ 1A, 5V | 2V @ 250µA | 10nC @ 5V | 270pF @ 25V | 5V | ±15V | |||
|
VIEW |
1,007
In-stock
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | |||
|
VIEW |
1,962
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 9A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta) | N-Channel | 60V | 9A (Ta) | 170 mOhm @ 4.5A, 5V | 2V @ 250µA | 10nC @ 5V | 275pF @ 25V | 5V | ±15V | |||
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|
VIEW |
3,609
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 12A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 3.9W (Ta), 48W (Tc) | N-Channel | 60V | 12A (Tc) | 180 mOhm @ 6A, 5V | 2V @ 250µA | 10nC @ 5V | 570pF @ 25V | 5V | ±20V | |||
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|
VIEW |
3,125
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
|
|
VIEW |
3,176
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 9A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 28.5W (Tj) | N-Channel | 60V | 9A (Ta) | 170 mOhm @ 4.5A, 5V | 2V @ 250µA | 10nC @ 5V | 275pF @ 25V | 5V | ±15V | |||
