- Part Status :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||
VIEW |
878
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
1,173
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 200V | 32A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 10.2nC @ 5V | 1050pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
1,941
In-stock
|
EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | N-Channel | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
2,565
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | - | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 200V | 11A (Ta) | 25 mOhm @ 20A, 5V | 2.5V @ 7mA | 3.6nC @ 5V | 345pF @ 100V | 5V | +6V, -4V |