Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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EPC2016
RFQ
VIEW
RFQ
3,148
In-stock
EPC TRANS GAN 100V 11A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die N-Channel - 100V 11A (Ta) 16 mOhm @ 11A, 5V 2.5V @ 3mA 5.2nC @ 5V 520pF @ 50V 5V +6V, -5V
EPC2010
RFQ
VIEW
RFQ
3,575
In-stock
EPC TRANS GAN 200V 12A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die N-Channel - 200V 12A (Ta) 25 mOhm @ 6A, 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V 5V +6V, -4V
EPC2018
RFQ
VIEW
RFQ
1,651
In-stock
EPC TRANS GAN 150V 12A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die N-Channel - 150V 12A (Ta) 25 mOhm @ 6A, 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V 5V +6V, -5V
EPC2202
RFQ
VIEW
RFQ
1,391
In-stock
EPC GANFET N-CH 80V 18A DIE Automotive, AEC-Q101, eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Outline (6-Solder Bar) N-Channel - 80V 18A 17 mOhm @ 11A, 5V 2.5V @ 3mA 4nC @ 5V 415pF @ 50V 5V +5.75V, -4V
EPC2010C
RFQ
VIEW
RFQ
3,289
In-stock
EPC TRANS GAN 200V 22A BUMPED DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Outline (7-Solder Bar) N-Channel - 200V 22A (Ta) 25 mOhm @ 12A, 5V 2.5V @ 3mA 5.3nC @ 5V 540pF @ 100V 5V +6V, -4V
EPC2016C
RFQ
VIEW
RFQ
2,564
In-stock
EPC TRANS GAN 100V 18A BUMPED DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die N-Channel - 100V 18A (Ta) 16 mOhm @ 11A, 5V 2.5V @ 3mA 4.5nC @ 5V 420pF @ 50V 5V +6V, -4V