Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
EPC2010
RFQ
VIEW
RFQ
3,575
In-stock
EPC TRANS GAN 200V 12A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die - N-Channel 200V 12A (Ta) 25 mOhm @ 6A, 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V 5V +6V, -4V
EPC2018
RFQ
VIEW
RFQ
1,651
In-stock
EPC TRANS GAN 150V 12A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die - N-Channel 150V 12A (Ta) 25 mOhm @ 6A, 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V 5V +6V, -5V
NTD3055L104T4G
RFQ
VIEW
RFQ
930
In-stock
ON Semiconductor MOSFET N-CH 60V 12A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.5W (Ta), 48W (Tj) N-Channel 60V 12A (Ta) 104 mOhm @ 6A, 5V 2V @ 250µA 20nC @ 5V 440pF @ 25V 5V ±15V
STDV3055L104T4G
RFQ
VIEW
RFQ
3,517
In-stock
ON Semiconductor MOSFET N-CH 60V 12A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.5W (Ta), 48W (Tj) N-Channel 60V 12A (Ta) 104 mOhm @ 6A, 5V 2V @ 250µA 20nC @ 5V 440pF @ 25V 5V ±15V