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- Rds On (Max) @ Id, Vgs :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,943
In-stock
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ON Semiconductor | MOSFET N-CH 60V 2A SOT223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 (TO-261) | 1.3W (Ta) | N-Channel | 60V | 2A (Ta) | 175 mOhm @ 1A, 5V | 2V @ 250µA | 10nC @ 5V | 270pF @ 25V | 5V | ±15V | |||
|
VIEW |
2,870
In-stock
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EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
