Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTB60N06LT4G
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RFQ
2,873
In-stock
ON Semiconductor MOSFET N-CH 60V 60A D2PAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 2.4W (Ta), 150W (Tj) N-Channel 60V 60A (Ta) 16 mOhm @ 30A, 5V 2V @ 250µA 65nC @ 5V 3075pF @ 25V 5V ±15V
EPC2023ENGR
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RFQ
2,491
In-stock
EPC TRANS GAN 30V 60A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 30V 60A (Ta) 1.3 mOhm @ 40A, 5V 2.5V @ 20mA 20nC @ 5V 2300pF @ 15V 5V +6V, -4V
EPC2020ENGR
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RFQ
2,275
In-stock
EPC TRANS GAN 60V 60A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 60V 60A (Ta) 2.2 mOhm @ 31A, 5V 2.5V @ 16mA 16nC @ 5V 1800pF @ 30V 5V +6V, -4V
EPC2022
RFQ
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RFQ
1,038
In-stock
EPC TRANS GAN 100V 3MOHM BUMPED DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 100V 60A (Ta) 3.2 mOhm @ 25A, 5V 2.5V @ 12mA - 1500pF @ 50V 5V +6V, -4V
EPC2024
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RFQ
1,034
In-stock
EPC MOSFET NCH 40V 60A DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 40V 60A (Ta) 1.5 mOhm @ 37A, 5V 2.5V @ 19mA - 2100pF @ 20V 5V +6V, -4V