- Part Status :
- Operating Temperature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
|
VIEW |
3,148
In-stock
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EPC | TRANS GAN 100V 11A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | 100V | 11A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | 520pF @ 50V | 5V | +6V, -5V | |||
|
VIEW |
2,565
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | - | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 200V | 11A (Ta) | 25 mOhm @ 20A, 5V | 2.5V @ 7mA | 3.6nC @ 5V | 345pF @ 100V | 5V | +6V, -4V | |||
