- Manufacture :
- Part Status :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
898
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 55V 5A SOT223 | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta) | N-Channel | - | 55V | 5A (Ta) | 40 mOhm @ 5A, 5V | 2V @ 1mA | - | 1400pF @ 25V | 5V | ±10V | |||
|
VIEW |
1,857
In-stock
|
EPC | TRANS GAN 200V 5A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (4-Solder Bar) | - | N-Channel | - | 200V | 5A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | 140pF @ 100V | 5V | +6V, -4V | |||
