- Manufacture :
- Part Status :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 10 mOhm @ 20A, 10V (1)
- 10 mOhm @ 25A, 10V (1)
- 14 mOhm @ 15A, 10V (1)
- 17 mOhm @ 11A, 5V (1)
- 2.5 mOhm @ 29A, 5V (1)
- 20 mOhm @ 10A, 10V (1)
- 22 mOhm @ 6A, 5V (1)
- 25 mOhm @ 10A, 10V (1)
- 25 mOhm @ 6A, 5V (1)
- 3.2 mOhm @ 30A, 5V (1)
- 31 mOhm @ 5A, 10V (1)
- 4 mOhm @ 25A, 10V (1)
- 4.5 mOhm @ 25A, 10V (1)
- 8 mOhm @ 25A, 10V (1)
- 80 mOhm @ 1A, 5V (1)
- 98 mOhm @ 5A, 10V (1)
- Vgs(th) (Max) @ Id :
- Vgs (Max) :
- Applied Filters :
16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,301
In-stock
|
EPC | TRANS GAN 80V 6.8A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 6.8A (Ta) | 22 mOhm @ 6A, 5V | 2.5V @ 2mA | 2nC @ 5V | 210pF @ 40V | 5V | +6V, -4V | |||
|
VIEW |
3,573
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 120A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 324W (Tc) | N-Channel | - | 80V | 120A (Tc) | 4.5 mOhm @ 25A, 10V | 2.1V @ 1mA | 92.1nC @ 5V | 15340pF @ 25V | 5V | ±10V | |||
|
VIEW |
3,565
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 80V | 62A (Tc) | 14 mOhm @ 15A, 10V | 2.1V @ 1mA | 28.9nC @ 5V | 4640pF @ 25V | 5V | ±10V | |||
|
VIEW |
1,656
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 26A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 62W (Tc) | N-Channel | - | 80V | 26A (Tc) | 31 mOhm @ 5A, 10V | 2.1V @ 1mA | 13.5nC @ 5V | 1804pF @ 25V | 5V | ±10V | |||
|
|
VIEW |
2,761
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 33A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 75W (Tc) | N-Channel | - | 80V | 33A (Tc) | 25 mOhm @ 10A, 10V | 2.1V @ 1mA | 16.7nC @ 5V | 2275pF @ 25V | 5V | ±10V | |||
|
|
VIEW |
2,178
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 75A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 182W (Tc) | N-Channel | - | 80V | 75A (Tc) | 10 mOhm @ 20A, 10V | 2.1V @ 1mA | 48.8nC @ 5V | 7149pF @ 25V | 5V | ±10V | |||
|
|
VIEW |
844
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 37A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 79W (Tc) | N-Channel | - | 80V | 37A (Tc) | 20 mOhm @ 10A, 10V | 2.1V @ 1mA | 20nC @ 5V | 2808pF @ 25V | 5V | ±10V | |||
|
|
VIEW |
1,310
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 100A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 238W (Tc) | N-Channel | - | 80V | 100A (Tc) | 8 mOhm @ 25A, 10V | 2.1V @ 1mA | 54.7nC @ 5V | 8167pF @ 25V | 5V | ±10V | |||
|
VIEW |
1,391
In-stock
|
EPC | GANFET N-CH 80V 18A DIE | Automotive, AEC-Q101, eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (6-Solder Bar) | - | N-Channel | - | 80V | 18A | 17 mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | 415pF @ 50V | 5V | +5.75V, -4V | |||
|
VIEW |
3,222
In-stock
|
EPC | GANFET N-CH 80V 1.7A 6SOLDER BAR | Automotive, AEC-Q101, eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 1.7A | 80 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | 88pF @ 50V | 5V | +5.75V, -4V | |||
|
|
VIEW |
932
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 120A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 349W (Tc) | N-Channel | - | 80V | 120A (Tc) | 4 mOhm @ 25A, 10V | 2.1V @ 1mA | 123nC @ 5V | 17130pF @ 25V | 5V | ±10V | |||
|
|
VIEW |
2,869
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 84A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 194W (Tc) | N-Channel | - | 80V | 84A (Tc) | 10 mOhm @ 25A, 10V | 2.1V @ 1mA | 44.2nC @ 5V | 6506pF @ 25V | 5V | ±10V | |||
|
|
VIEW |
603
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 80V 11.8A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 37W (Tc) | N-Channel | - | 80V | 11.8A (Tc) | 98 mOhm @ 5A, 10V | 2.1V @ 1mA | 6.2nC @ 5V | 706pF @ 25V | 5V | ±10V | |||
|
VIEW |
3,286
In-stock
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | |||
|
VIEW |
2,648
In-stock
|
EPC | TRANS GAN 80V 31A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 48A (Ta) | 3.2 mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | 1410pF @ 40V | 5V | +6V, -4V | |||
|
|
VIEW |
873
In-stock
|
EPC | TRANS GAN 80V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 6.8A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4nC @ 5V | 210pF @ 40V | 5V | +6V, -4V | |||
