- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,071
In-stock
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EPC | TRANS GAN 40V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 40V | 2.7A (Ta) | 110 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 20V | 5V | +6V, -4V | |||
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VIEW |
1,034
In-stock
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EPC | MOSFET NCH 40V 60A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 40V | 60A (Ta) | 1.5 mOhm @ 37A, 5V | 2.5V @ 19mA | - | 2100pF @ 20V | 5V | +6V, -4V | |||
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VIEW |
3,424
In-stock
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EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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VIEW |
2,866
In-stock
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EPC | TRANS GAN 40V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 40V | 16A (Ta) | 5 mOhm @ 15A, 5V | 2.5V @ 6mA | 7.6nC @ 5V | 805pF @ 20V | 5V | +6V, -4V | |||
|
VIEW |
2,806
In-stock
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EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 40V | 53A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | 1000pF @ 20V | 5V | +6V, -4V | |||
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VIEW |
1,635
In-stock
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EPC | TRANS GAN 40V 10A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | N-Channel | - | 40V | 10A (Ta) | 16 mOhm @ 10A, 5V | 2.5V @ 2mA | 2.5nC @ 5V | 300pF @ 20V | 5V | +6V, -4V | |||
