- Part Status :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
943
In-stock
|
EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | N-Channel | - | 40V | 33A (Ta) | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | 5V | +6V, -5V | ||||
VIEW |
3,125
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | ||||
VIEW |
902
In-stock
|
EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V |