- Series :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 10.3 mOhm @ 17.5A, 10V (1)
- 104 mOhm @ 4A, 10V (1)
- 11.2 mOhm @ 30A, 10V (1)
- 13.8 mOhm @ 25A, 10V (1)
- 14 mOhm @ 10A, 10V (1)
- 18 Ohm @ 15A, 10V (1)
- 21.8 mOhm @ 15A, 10V (1)
- 22.2 mOhm @ 10A, 10V (1)
- 28 mOhm @ 5A, 10V (1)
- 29 mOhm @ 10A, 10V (1)
- 3.1 mOhm @ 40A, 10V (1)
- 4.5 mOhm @ 32.5A, 10V (1)
- 44 mOhm @ 5A, 10V (1)
- 5.2 mOhm @ 40A, 10V (1)
- 5.5 mOhm @ 40A, 10V (1)
- 50 mOhm @ 7.5A, 10V (1)
- 54 mOhm @ 4A, 10V (1)
- 6.3 mOhm @ 30A, 10V (1)
- 8 mOhm @ 30A, 10V (1)
- 9.1 mOhm @ 20A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1350pF @ 10V (1)
- 1370pF @ 10V (1)
- 1770pF @ 10V (1)
- 1850pF @ 10V (1)
- 2800pF @ 10V (1)
- 2900pF @ 10V (1)
- 3950pF @ 10V (1)
- 400pF @ 10V (1)
- 410pF @ 10V (1)
- 4140pF @ 10V (1)
- 4200pF @ 10V (1)
- 4340pF @ 10V (1)
- 6290pF @ 10V (1)
- 6510pF @ 10V (1)
- 7760pF @ 10V (1)
- 7770pF @ 10V (1)
- 780pF @ 10V (1)
- 820pF @ 10V (1)
- 890pF @ 10V (1)
- 930pF @ 10V (1)
- Vgs (Max) :
- Applied Filters :
20 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,966
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 80A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | P-Channel | - | 40V | 80A (Ta) | 5.2 mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | 7770pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
1,288
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 60A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | P-Channel | - | 60V | 60A (Ta) | 11.2 mOhm @ 30A, 10V | 3V @ 1mA | 156nC @ 10V | 7760pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
1,300
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 35A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 58W (Tc) | N-Channel | - | 40V | 35A (Ta) | 10.3 mOhm @ 17.5A, 10V | 3V @ 1mA | 28nC @ 10V | 1370pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
2,882
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 30A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 58W (Tc) | N-Channel | - | 60V | 30A (Ta) | 18 Ohm @ 15A, 10V | 3V @ 1mA | 28nC @ 10V | 1350pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
1,319
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 60V | 80A (Ta) | 5.5 mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | 4200pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
2,659
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 80A (Ta) | 3.1 mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | 4340pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
1,282
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 60A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 90W (Tc) | P-Channel | - | 40V | 60A (Ta) | 6.3 mOhm @ 30A, 10V | 3V @ 1mA | 125nC @ 10V | 6510pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
3,971
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 50A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 90W (Tc) | P-Channel | - | 60V | 50A (Ta) | 13.8 mOhm @ 25A, 10V | 3V @ 1mA | 124nC @ 10V | 6290pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
2,889
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 20A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 38W (Tc) | N-Channel | - | 60V | 20A (Ta) | 29 mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | 780pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
2,217
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 38W (Tc) | N-Channel | - | 40V | 20A (Ta) | 14 mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | 820pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
1,804
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 20A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 41W (Tc) | P-Channel | - | 40V | 20A (Ta) | 22.2 mOhm @ 10A, 10V | 3V @ 1mA | 37nC @ 10V | 1850pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
2,803
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 15A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 41W (Tc) | P-Channel | - | 60V | 15A (Ta) | 50 mOhm @ 7.5A, 10V | 3V @ 1mA | 36nC @ 10V | 1770pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
3,305
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 10A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 27W (Tc) | P-Channel | - | 40V | 10A (Ta) | 44 mOhm @ 5A, 10V | 3V @ 1mA | 19nC @ 10V | 930pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
2,805
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 8A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 25W (Tc) | N-Channel | - | 60V | 8A (Ta) | 54 mOhm @ 4A, 10V | 3V @ 1mA | 10nC @ 10V | 400pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
603
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 10A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 25W (Tc) | N-Channel | - | 40V | 10A (Ta) | 28 mOhm @ 5A, 10V | 3V @ 1mA | 10nC @ 10V | 410pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
3,505
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 8A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 27W (Tc) | P-Channel | - | 60V | 8A (Ta) | 104 mOhm @ 4A, 10V | 3V @ 1mA | 19nC @ 10V | 890pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
1,308
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 30A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 68W (Tc) | P-Channel | - | 60V | 30A (Ta) | 21.8 mOhm @ 15A, 10V | 3V @ 1mA | 80nC @ 10V | 3950pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
1,903
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 40A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 68W (Tc) | P-Channel | - | 40V | 40A (Ta) | 9.1 mOhm @ 20A, 10V | 3V @ 1mA | 83nC @ 10V | 4140pF @ 10V | 6V, 10V | +10V, -20V | ||||
VIEW |
2,283
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 3V @ 1mA | 63nC @ 10V | 2800pF @ 10V | 6V, 10V | ±20V | ||||
VIEW |
933
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 60V | 60A (Ta) | 8 mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | 2900pF @ 10V | 6V, 10V | ±20V |