Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3431-Z-E1-AZ
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Renesas Electronics America MOSFET N-CH 40V 83A TO220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 1.5W (Ta), 100W (Tc) N-Channel 40V 83A (Tc) 5.6 mOhm @ 42A, 10V - 110nC @ 10V 6100pF @ 10V 4V, 10V ±20V
2SK3431-AZ
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Renesas Electronics America MOSFET N-CH 40V 83A TO220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 1.5W (Ta), 100W (Tc) N-Channel 40V 83A (Tc) 5.6 mOhm @ 42A, 10V - 110nC @ 10V 6100pF @ 10V 4V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 45A TO220FL - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3, Short Tab TO-220FL 100W (Tc) N-Channel 60V 45A (Ta) 17 mOhm @ 25A, 10V 2V @ 1mA 110nC @ 10V 3350pF @ 10V 4V, 10V ±20V