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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRLR120N	RFQ VIEW	PDF RFQ	3,250 In-stock	Infineon Technologies	MOSFET N-CH 100V 10A DPAK		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	48W (Tc)	N-Channel	-	100V	10A (Tc)	185 mOhm @ 6A, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	4V, 10V	±16V
	IRLR120NPBF	RFQ VIEW	PDF RFQ	3,414 In-stock	Infineon Technologies	MOSFET N-CH 100V 10A DPAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	48W (Tc)	N-Channel	-	100V	10A (Tc)	185 mOhm @ 6A, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	4V, 10V	±16V
	IRL520NPBF	RFQ VIEW	PDF RFQ	875 In-stock	Infineon Technologies	MOSFET N-CH 100V 10A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	48W (Tc)	N-Channel	-	100V	10A (Tc)	180 mOhm @ 6A, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	4V, 10V	±16V
	IRLU120NPBF	RFQ VIEW	PDF RFQ	742 In-stock	Infineon Technologies	MOSFET N-CH 100V 10A I-PAK		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	48W (Tc)	N-Channel	-	100V	10A (Tc)	185 mOhm @ 6A, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	4V, 10V	±16V

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