Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET N-CH 60V 100A - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 1.65W (Ta), 90W (Tc) N-Channel 60V 100A (Ta) 4.7 mOhm @ 50A, 10V 220nC @ 10V 12500pF @ 20V 4V, 10V ±20V
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ON Semiconductor MOSFET P-CH 60V 38A - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 1.65W (Ta), 65W (Tc) P-Channel 60V 38A (Ta) 39 mOhm @ 19A, 10V 80nC @ 10V 4360pF @ 20V 4V, 10V ±20V