- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,258
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 50V 25A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 30W (Tc) | N-Channel | - | 50V | 25A (Ta) | 46 mOhm @ 12A, 10V | 2V @ 1mA | 25nC @ 10V | 900pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
1,755
In-stock
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Rohm Semiconductor | MOSFET N-CH 60V 10A TO-220FN | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN | 30W (Tc) | N-Channel | - | 60V | 10A (Ta) | 95 mOhm @ 5A, 10V | 2.5V @ 1mA | - | 1600pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
3,761
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.1A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 30W (Tc) | N-Channel | - | 100V | 8.1A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | |||
