- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,418
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 3.8A SC-59 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SC-59 | 500mW (Ta) | N-Channel | 20V | 3.8A (Ta) | 21 mOhm @ 3.8A, 4.5V | 1.2V @ 30µA | 8.8nC @ 4.5V | 1147pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
792
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 20V 5.3A SOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 2W (Ta) | N-Channel | 20V | 5.3A (Tc) | 33 mOhm @ 5.3A, 4.5V | 1V @ 250µA | 8.8nC @ 4.5V | 700pF @ 10V | 2.5V, 4.5V | ±12V |