Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CH 240V 200MA TO236 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 360mW (Ta) N-Channel 240V 200mA (Ta) 4 Ohm @ 300mA, 10V 2V @ 250µA 8nC @ 10V - 2.5V, 10V ±20V
SI8816EDB-T2-E1
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Vishay Siliconix MOSFET N-CH 30V MICRO FOOT TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA 4-Microfoot 500mW (Ta) N-Channel 30V - 109 mOhm @ 1A, 10V 1.4V @ 250µA 8nC @ 10V 195pF @ 15V 2.5V, 10V ±12V
TN2404K-T1-E3
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Vishay Siliconix MOSFET N-CH 240V 200MA SOT23-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 360mW (Ta) N-Channel 240V 200mA (Ta) 4 Ohm @ 300mA, 10V 2V @ 250µA 8nC @ 10V - 2.5V, 10V ±20V