Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PH3230S,115
RFQ
VIEW
RFQ
2,171
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 100A LFPAK TrenchMOS™ Last Time Buy Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 62.5W (Tc) N-Channel - 30V 100A (Tc) 3.2 mOhm @ 25A, 10V 3V @ 1mA 42nC @ 5V 4100pF @ 10V 4.5V, 10V ±20V
PH3230S,115
RFQ
VIEW
RFQ
2,871
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 100A LFPAK TrenchMOS™ Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 62.5W (Tc) N-Channel - 30V 100A (Tc) 3.2 mOhm @ 25A, 10V 3V @ 1mA 42nC @ 5V 4100pF @ 10V 4.5V, 10V ±20V
PH955L,115
RFQ
VIEW
RFQ
894
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 62.5A LFPAK TrenchMOS™ Last Time Buy Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 62.5W (Tc) N-Channel - 55V 62.5A (Tc) 8.3 mOhm @ 25A, 10V 2V @ 1mA 42nC @ 5V 2836pF @ 25V 4.5V, 10V ±20V