Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM052N06PQ56 RLG
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2,199
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Taiwan Semiconductor Corporation MOSFET N-CH 60V 100A 8PDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel 60V 100A (Tc) 5.2 mOhm @ 20A, 10V 4V @ 250µA 50nC @ 10V 3686pF @ 30V 10V ±25V
TSM130NB06CR RLG
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1,730
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Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 83W (Tc) N-Channel 60V 10A (Ta), 51A (Tc) 13 mOhm @ 10A, 10V 4V @ 250µA 36nC @ 10V 2380pF @ 30V 10V ±20V
TSM220NB06CR RLG
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2,841
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Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 68W (Tc) N-Channel 60V 8A (Ta), 35A (Tc) 22 mOhm @ 8A, 10V 4V @ 250µA 23nC @ 10V 1454pF @ 30V 10V ±20V
TSM300NB06CR RLG
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RFQ
2,819
In-stock
Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 56W (Tc) N-Channel 60V 6A (Ta), 27A (Tc) 30 mOhm @ 6A, 10V 4.5V @ 250µA 18nC @ 10V 1110pF @ 30V 10V ±20V
TSM045NB06CR RLG
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RFQ
1,066
In-stock
Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 136W (Tc) N-Channel 60V 16A (Ta), 104A (Tc) 5 mOhm @ 16A, 10V 4V @ 250µA 104nC @ 10V 6870pF @ 30V 10V ±20V