Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,871
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Vishay Siliconix MOSFET N-CH 500V 26A TO263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 250W (Tc) N-Channel 500V 26A (Tc) 145 mOhm @ 12A, 10V 4V @ 250µA 86nC @ 10V 1980pF @ 100V 10V ±30V
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993
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Vishay Siliconix MOSFET N-CH 650V 15A TO263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 34W (Tc) N-Channel 650V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 96nC @ 10V 1640pF @ 100V 10V ±30V
SIHB10N40D-GE3
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3,135
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Vishay Siliconix MOSFET N-CH 400V 10A DPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 147W (Tc) N-Channel 400V 10A (Tc) 600 mOhm @ 5A, 10V 5V @ 250µA 30nC @ 10V 526pF @ 100V 10V ±30V
SIHB8N50D-GE3
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2,124
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Vishay Siliconix MOSFET N-CH 500V 8.7A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 156W (Tc) N-Channel 500V 8.7A (Tc) 850 mOhm @ 4A, 10V 5V @ 250µA 30nC @ 10V 527pF @ 100V 10V ±30V
IRF530SPBF
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821
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Vishay Siliconix MOSFET N-CH 100V 14A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.7W (Ta), 88W (Tc) N-Channel 100V 14A (Tc) 160 mOhm @ 8.4A, 10V 4V @ 250µA 26nC @ 10V 670pF @ 25V 10V ±20V