Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF840B
RFQ
VIEW
RFQ
3,254
In-stock
ON Semiconductor MOSFET N-CH 500V 8A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 134W (Tc) N-Channel - 500V 8A (Tc) 800 mOhm @ 4A, 10V 4V @ 250µA 53nC @ 10V 1800pF @ 25V 10V ±30V
IXFH20N50P3
RFQ
VIEW
RFQ
3,196
In-stock
IXYS MOSFET N-CH 500V 20A TO-247 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 380W (Tc) N-Channel - 500V 20A (Tc) 300 mOhm @ 10A, 10V 5V @ 1.5mA 36nC @ 10V 1800pF @ 25V 10V ±30V
R5016ANX
RFQ
VIEW
RFQ
958
In-stock
Rohm Semiconductor MOSFET N-CH 500V 16A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel - 500V 16A (Ta) 270 mOhm @ 8A, 10V 4.5V @ 1mA 50nC @ 10V 1800pF @ 25V 10V ±30V
RJK5014DPP-E0#T2
RFQ
VIEW
RFQ
2,361
In-stock
Renesas Electronics America MOSFET N-CH 500V 19A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel - 500V 19A (Ta) 390 mOhm @ 9.5A, 10V - 46nC @ 10V 1800pF @ 25V 10V ±30V
IXFQ20N50P3
RFQ
VIEW
RFQ
1,706
In-stock
IXYS MOSFET N-CH 500V 20A TO-3P HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 380W (Tc) N-Channel - 500V 20A (Tc) 300 mOhm @ 10A, 10V 5V @ 1.5mA 36nC @ 10V 1800pF @ 25V 10V ±30V
IXFA20N50P3
RFQ
VIEW
RFQ
2,865
In-stock
IXYS MOSFET N-CH 500V 20A TO-263AA HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 380W (Tc) N-Channel - 500V 20A (Tc) 300 mOhm @ 10A, 10V 5V @ 1.5mA 36nC @ 10V 1800pF @ 25V 10V ±30V
R5016ANJTL
RFQ
VIEW
RFQ
2,670
In-stock
Rohm Semiconductor MOSFET N-CH 10V DRIVE LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 100W (Tc) N-Channel - 500V 16A (Ta) 270 mOhm @ 8A, 10V 4.5V @ 1mA 50nC @ 10V 1800pF @ 25V 10V ±30V
TK13A50D(STA4,Q,M)
RFQ
VIEW
RFQ
3,007
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 13A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 500V 13A (Ta) 400 mOhm @ 6.5A, 10V 4V @ 1mA 38nC @ 10V 1800pF @ 25V 10V ±30V
IXFP20N50P3
RFQ
VIEW
RFQ
1,180
In-stock
IXYS MOSFET N-CH 500V 8A TO220 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 500V 8A (Tc) 300 mOhm @ 10A, 10V 5V @ 1.5mA 36nC @ 10V 1800pF @ 25V 10V ±30V
IXFP20N50P3M
RFQ
VIEW
RFQ
1,172
In-stock
IXYS MOSFET N-CH 500V 8A TO-220 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 58W (Tc) N-Channel - 500V 8A (Tc) 300 mOhm @ 10A, 10V 5V @ 1.5mA 36nC @ 10V 1800pF @ 25V 10V ±30V