- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,370
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 45A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 45W (Tc) | N-Channel | - | 60V | 45A (Ta) | 5.8 mOhm @ 23A, 10V | 4V @ 1mA | 196nC @ 10V | 12400pF @ 10V | 10V | ±20V | |||
|
VIEW |
3,486
In-stock
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Infineon Technologies | MOSFET N-CH 40V 202A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 333W (Tc) | N-Channel | - | 40V | 160A (Tc) | 4 mOhm @ 121A, 10V | 4V @ 250µA | 196nC @ 10V | 5669pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,579
In-stock
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IXYS | MOSFET P-CH 600V 32A SOT227 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 890W (Tc) | P-Channel | - | 600V | 32A (Tc) | 350 mOhm @ 500mA, 10V | 4V @ 1mA | 196nC @ 10V | 11100pF @ 25V | 10V | ±20V | |||
|
VIEW |
898
In-stock
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IXYS | MOSFET P-CH 600V 18A ISOPLUS247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 310W (Tc) | P-Channel | - | 600V | 18A (Tc) | 385 mOhm @ 16A, 10V | 4V @ 1mA | 196nC @ 10V | 11100pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,622
In-stock
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IXYS | MOSFET P-CH 600V 32A TO-264 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 (IXTK) | 890W (Tc) | P-Channel | - | 600V | 32A (Tc) | 350 mOhm @ 16A, 10V | 4V @ 1mA | 196nC @ 10V | 11100pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,138
In-stock
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IXYS | MOSFET P-CH 600V 32A PLUS247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 890W (Tc) | P-Channel | - | 600V | 32A (Tc) | 350 mOhm @ 16A, 10V | 4V @ 1mA | 196nC @ 10V | 11100pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,246
In-stock
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Infineon Technologies | MOSFET N-CH 40V 202A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 333W (Tc) | N-Channel | - | 40V | 202A (Tc) | 4 mOhm @ 121A, 10V | 4V @ 250µA | 196nC @ 10V | 5669pF @ 25V | 10V | ±20V | |||
