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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK10A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	3,257 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 10A TO220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	10A (Ta)	750 mOhm @ 5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK11A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,382 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 11A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	11A (Ta)	630 mOhm @ 5.5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK12A53D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,985 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	525V	12A (Ta)	580 mOhm @ 6A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK13A45D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,003 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 13A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	450V	13A (Ta)	460 mOhm @ 6.5A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	TK12A50D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,648 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	500V	12A (Ta)	520 mOhm @ 6A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V
	FQPF7P20	RFQ VIEW	PDF RFQ	3,622 In-stock	ON Semiconductor	MOSFET P-CH 200V 5.2A TO-220F		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F	45W (Tc)	P-Channel	-	200V	5.2A (Tc)	690 mOhm @ 2.6A, 10V	5V @ 250µA	25nC @ 10V	770pF @ 25V	10V	±30V
	TK8A65D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,480 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5A TO-220SIS		π-MOSVII	Active	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	650V	8A (Ta)	840 mOhm @ 4A, 10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	10V	±30V

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