Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK15A60U(STA4,Q,M)
RFQ
VIEW
RFQ
1,058
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 15A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 600V 15A (Ta) 300 mOhm @ 7.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
FDPF7N60NZT
RFQ
VIEW
RFQ
3,050
In-stock
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220F UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 33W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V
TK15J60U(F)
RFQ
VIEW
RFQ
1,741
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 15A TO-3PN DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 170W (Tc) N-Channel - 600V 15A (Ta) 300 mOhm @ 7.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
FDP7N60NZ
RFQ
VIEW
RFQ
1,907
In-stock
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 147W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V
FDPF7N60NZ
RFQ
VIEW
RFQ
1,042
In-stock
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220F UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 33W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V