Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPN04N60S5
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RFQ
3,918
In-stock
Infineon Technologies MOSFET N-CH 600V 0.8A SOT-223 CoolMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 600V 800mA (Ta) 950 mOhm @ 2.8A, 10V 5.5V @ 200µA 17nC @ 10V 600pF @ 25V 10V ±20V
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RFQ
2,671
In-stock
Infineon Technologies MOSFET N-CH 600V 3.2A TO251-3 CoolMOS™ Obsolete - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 38W (Tc) N-Channel - 600V 3.2A (Tc) 1.4 Ohm @ 2A, 10V 3.9V @ 135µA 17nC @ 10V 400pF @ 25V 10V ±20V
STFI13N60M2
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RFQ
1,883
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STMicroelectronics MOSFET N-CH 600V I2PAK-FP MDmesh™ II Plus Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 25W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 17nC @ 10V 580pF @ 100V 10V ±25V
STFI15N60M2-EP
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RFQ
3,348
In-stock
STMicroelectronics MOSFET N-CH 600V 11A I2PAKFP MDmesh™ M2 Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 25W (Tc) N-Channel - 600V 11A (Tc) 378 mOhm @ 5.5A, 10V 4V @ 250µA 17nC @ 10V 590pF @ 100V 10V ±25V