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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,985
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 525V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 525V | 12A (Ta) | 580 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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VIEW |
2,490
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 11A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 180W (Tc) | N-Channel | 600V | 11A (Tc) | 580 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 2100pF @ 25V | 10V | ±30V | |||
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VIEW |
762
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 11A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 180W (Tc) | N-Channel | 600V | 11A (Tc) | 580 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 2100pF @ 25V | 10V | ±30V |